NUMERICAL MODELING AND OPTIMIZATION OF A HIGH EFFICIENT LEAD-FREE CsSnGeI₃ PEROVSKITE SOLAR CELL USING SOLAR CELL CAPACITANCE SIMULATOR

Abstract

In this work, a lead-free CsSnGeI3 based PSC was numerically investigated using SCAPS-1D simulator. A planar n-i-p structure using ITO/SnO₂/CsSnGeI₃/HTL/Au was used and the effects of various hole transport layer (CuI, P₃HT and CuO) were systematically studied. SnO2 was selected as the electron transport layer because of its good band structure and high electron mobility. The thicknesses of absorber, hole transport layer and electron transport layer were optimized to have better charge transport and reduce recombination losses. The results show that performance of the device highly depends on the thickness of the absorber. Among the investigated hole transport layers, CuI and P₃HT had better photovoltaic performance due to efficient hole extraction and reduced recombination but CuO showed a comparatively lower efficiency. The simulated device showed the best result in optimized condition 34.01% maximum power conversion efficiency, the open-circuit voltage of 1.13V, the short-circuit current density of 35.29 mA/cm² and the fill factor of 84.99%. These results show the great potential of CsSnGeI3 as an environment-friendly absorber for high performance lead-free perovskite solar cells